smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK2887 features low on-resistance. fast switching speed. wide soa (safe operating area). gate-source voltage (v gss ) guaranteed to be 30v. easily designed drive circuits. easy to parallel. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v i d 3a i dp *12 a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =1ma,v gs =0 200 v drain cut-off current i dss v ds =200v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 100 na gate threshold voltage v gs(th) v ds =10v,i d =1ma 2.0 4.0 v forward transfer admittance y fs v ds =10v,i d =1.5a 0.6 1.5 s drain to source on-state resistance r ds(on) v gs =10v,i d =1.5a 0.7 0.9 input capacitance c iss 230 pf output capacitance c oss 100 pf reverse transfer capacitance c rss 35 pf turn-on delay time t on 10 ns rise time t r 12 ns turn-off delay time t off 26 ns fall time tf 34 ns reverse recovery time t rr 96 ns reverse recovery charge qrr 0.56 c v ds =10v,v gs =0,f=1mhz i d =1.5a,v gs(on) =10v,r l =68 ,rg=10 ,v dd =100v i dr =3a,v gs =0v,d i /d t =100a/ s 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type smd type smd type ic smd type smd type ic smd type product specification
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